RM6601SN
product description
RM6601SN is a high-performance and high-reliability current control PWM switch control chip. The standby power consumption in the full voltage range is less than 75mW, meets the six-level energy efficiency standard, and supports CCM/QR hybrid mode.
RM6601SN integrates multiple working modes. Under heavy load, the system works in the traditional fixed frequency 130Khz PWM mode, and under low voltage input, it will enter CCM mode; under heavy load, the system works in QR mode to reduce switching At the same time, combined with PFM working mode to improve system efficiency; RM6601SN adopts proprietary driving technology to directly drive E-mode GaN FET; under light load or no load, the system works in Burst Mode, which effectively removes audio noise, and at the same time In the mode, RM6601SN itself has very low loss, so it can achieve ultra-low standby power consumption. In any mode, a unique frequency jitter operation mode is integrated to improve EMI.
RM6601SN integrates multiple protection modes and compensation circuits at the same time, including VCC OVP, built-in OTP, external OVP, undervoltage lockout (uvlo), cycle-by-cycle overcurrent protection OCP, overload protection (OLP), CS short circuit protection, output Schott Base short circuit protection, etc., and built-in slope compensation function.
Features
• Support CCM/QR hybrid mode;
• Built-in 700V high voltage start;
• Integrated X-CAP discharge function;
• Support maximum 130KHz working frequency;
• Built-in unique frequency jittering technology to improve EMI;
• Burst Mode to remove noise;
• Low starting current (2uA), low working current;
• Integrated slope compensation and high and low voltage power compensation;
• Integrated AC input Brown out/in function;
• External OVP protection;
• With output Schottky short circuit protection/CS short circuit protection;
• Built-in multiple protections such as OVP/OTP/OCP/OLP/UVLO.
Application field
• Fast charger
• High-power adapter
• TV power
Related documents
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