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• Time of issue:2021-03-10 14:01
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(Summary description) For traditional semiconductor materials, the high switching frequency will lead to high switching loss, and the low loss characteristics of Gan materials can reduce the heating, while increasing the switching frequency can reduce the volume of transformer and capacitor, which will help to reduce the volume and weight of charger Now the fast charging power is higher and higher, the mass production of civil Gan chargers can be said to represent a development direction of future chargers. Although the current price is relatively high, I believe that in the near future, with the technology of Gan materials becoming more and more mature and popular, the cost of Gan chargers will be lower and lower Gallium nitride (GAN) is a compound of nitrogen and gallium. It is a direct band gap semiconductor and has been widely used in light-emitting diodes since 1990. The structure of the compound is similar to wurtzite and its hardness is very high. Gallium nitride has a wide energy gap of 3.4 EV, which can be used in high-power and high-speed optoelectronic devices. For example, gallium nitride can be used in violet laser diode, and can generate violet (405nm) laser without using nonlinear diode pumped solid-state laser In 2014, Nagoya University and Nagoya University Professor Nagasaki, Nagoya University Professor Hiroshi Tano and University of California Santa Barbara Professor Nakamura Xiuer won the Nobel Prize in physics for the invention of blue LED Gan is also one of our business scope. However, due to the problem of high cost and low yield in the solution of Gan materials, Gan epitaxial films are mainly used in LED and GaN / SiC films in 5g RF devices. The use of Gan in power devices still needs time in China. At present, Gan materials can be produced by Suzhou nanotechnology in China The key chip of Xiaomi's 65W Gan charger is From Navitas nano micro Gan power chip nv6115. Its built-in driver and complex logic control circuit, 170m & omega; Resistance, 650V withstand voltage, 2MHz switching frequency, 5 * 6mm QFN package Nanomicro is the only Gan chip in the world. And nv6113, nv6117, etc Nanomicro nv6115 has been used by Anker powercore fusion PD super charge, ravpower 45W Gan PD charger, Beisi 65W Gan charger, Roxanne 66W Gan USB PD dual port fast charging charger and other products Usb-c interface VBUS switch from Huayi semiconductor, model hy15p03, PMOS, withstand voltage 30V, conduction resistance 4.8m & omega Tianyu's fast charging protocol chip has been used by Zimi 10000mah USB PD fast charging mobile power supply, Nubia Red Devils 10000mah electric competitive mobile power supply, Xiaomi 45W USB PD mobile power supply 3 high configuration version, Zimi's first MFI Certified Wireless charging mobile power supply, idmix 1a1c 18W PD fast charging charger and other fast charging products, and its performance has been widely recognized by customers Usb-a interface synchronous buck chip comes from southchip semiconductor, model sc8903. The chip is a high-efficiency synchronous buck converter with integrated four transistor H-bridge, which supports the maximum working voltage of 24 V, dynamic output voltage control, adjustable switching frequency, programmable input and output current limit, and various protection functions Usb-c interface protocol uses huinengtai semiconductor husb339. The chip is the latest USB pd3.0 fast charging protocol chip of Shenzhen huinengtai Semiconductor Technology Co., Ltd. It has passed the USB pd3.0 PPS certification of usb-if Association, TID 62. It is also the first Chinese mainland chip to be certified by USB PD3.0 PPS, which supports up to five FPDO and second APDO, supporting the optional setting and combination of FPDO files in the 5V~23V range. The maximum current level of all PDO can reach 5A. p>